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About SiC
Rimal’s SiC chips excel in extreme conditions for EVs and renewables.
Silicon Carbide offers a 3.26 eV bandgap for high-voltage (650V–1200V, developing 1700V) and low RDS(on) (16–110mΩ).
| Parameter | Value |
|---|---|
| Voltage (Vds) | 650V–1200V (1700V dev.) |
| RDS(on) | 16mΩ–110mΩ |
| Switching Speed | <20ns |
| Max Continuous Drain Current (Id) | 30A–150A |
| Total Gate Charge (Qg) | 20nC–80nC |
| Bandgap Energy | 3.26 eV |
| Max Junction Temperature (Tj) | -55°C to +200°C |
| Thermal Conductivity | 3–5 W/cm·K |
Applications
EV Onboard Chargers
Fast, efficient AC-DC conversion for electric vehicle charging, reducing charge times.
Solar Inverters
High-efficiency DC-AC converters for solar power plants, maximizing output in high-temperature conditions.
5G RF Amplifiers
High-frequency power amplification for 5G base stations, supporting Saudi’s telecom expansion.
Rail Traction Systems
High-voltage drives for trains, ensuring reliability in heavy-duty applications.
Aerospace Power Electronics
Radiation-hardened modules for satellite and avionics systems, operating in extreme conditions.
DC-DC Converters
High-power conversion for battery storage systems, enhancing grid stability.
Fast-Charging Stations
Ultra-efficient power delivery for EV fast chargers, supporting Saudi’s infrastructure growth.