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About GaN
Rimal’s GaN chips revolutionize telecom and consumer electronics
Gallium Nitride offers high electron mobility (2000 cm²/V·s) for 100V–650V, low RDS(on) (15–50mΩ).
| Parameter | Value |
|---|---|
| Voltage (Vds) | 100V–650V |
| RDS(on) | 15mΩ–50mΩ |
| Switching Speed | <5ns |
| Max Continuous Drain Current (Id) | 20A–100A |
| Total Gate Charge (Qg) | 5nC–30nC |
| Electron Mobility | ~2000 cm²/V·s |
| Max Junction Temperature (Tj) | -55°C to +150°C |
| Power Density | Up to 10x Si |
Applications
5G RF Amplifiers
High-frequency power amplifiers for 5G small cells, enabling Saudi’s next-gen network rollout.
Fast Chargers
Compact USB-C chargers for smartphones and laptops, reducing size and improving efficiency.
Wearable Devices
Power management for smartwatches and health monitors, supporting Saudi’s wearable tech market.
Wireless Power Transfer
Efficient modules for wireless charging pads in homes and public spaces.
DC-DC Converters
High-frequency converters for telecom power supplies, ensuring reliability in 5G infrastructure.
Radar Systems
High-speed GaN HEMTs for radar modules, supporting Saudi’s defense technology advancements.
Portable Medical Devices
Compact power solutions for diagnostic tools, enhancing portability in healthcare settings.